absolute maximum ratings parameter units i d @ v gs =0v, t c = 25c continuous drain current 8.0 i d @ v gs = 0v, t c = 100c continuous drain current 5.0 i dm pulsed drain current ? 32 p d @ t c = 25c max. power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 700 mj i ar avalanche current ? 8.0 a e ar repetitive avalanche energy ? -mj dv/dt peak diode recovery dv/dt ? 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10s) weight 11.5(typical) g pd - 90372a the hexfet ? technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry and unique processing of this latest ?state of the art? design achieves: very low on-state resis- tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. the hexfet transistors also feature all of the well estab- lished advantages of mosfets such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. o c a repetitive avalanche and dv/dt rated IRF440 hexfet ? transistors thru-hole (to-204aa/ae) 4/20/01 www.irf.com 1 500v, n-channel to-3 product summary part number bvdss r ds(on) i d IRF440 500v 0.85 ? 8.0 a features: repetitive avalanche ratings dynamic dv/dt rating hermetically sealed simple drive requirements ease of paralleling for footnotes refer to the last page
IRF440 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction to case ? ? 1.0 r thja junction to ambient ? ? 30 typical socket mount c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 8.0 i sm pulse source current (body diode) ? ?? 32 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 8.0a, v gs = 0v ? t rr reverse recovery time ? ? 700 ns t j = 25c, i f = 8.0a, di/dt 100a/ s q rr reverse recovery charge ? ? 8.9 c v dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 500 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.78 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.85 v gs = 10v, i d = 5.0a ? resistance ? ? 0.98 v gs = 10v, i d =8.0a ? v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d =250a g fs forward transconductance 4.7 ? ? s ( )v ds > 15v, i ds = 5.0a ? i dss zero gate voltage drain current ? ? 25 v ds =400v, v gs =0v ? ? 250 v ds = 400v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge 27.3 ? 68.5 v gs =10v, id = 8.0a q gs gate-to-source charge 2.0 ? 12.5 nc v ds = 250v q gd gate-to-drain (?miller?) charge 11 ? 42 t d (on) turn-on delay time ? ? 21 v dd =250v, i d =8.0a, t r rise time ? ? 73 r g =9.1 ? t d (off) turn-off delay time ? ? 72 t f fall time ? ? 51 l s + l d total inductance ? 6.1 ? c iss input capacitance ? 1300 v gs = 0v, v ds = 25v c oss output capacitance ? 310 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 120 ? na ? nh ns a ? measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
www.irf.com 3 IRF440 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics
IRF440 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 13 a& b
www.irf.com 5 IRF440 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature
IRF440 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 10v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
www.irf.com 7 IRF440 foot notes: ? i sd 8.0, di/dt 100a/ s, v dd 500v, t j 150 c suggested rg =9.1 ? ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 50v, starting t j = 25 c, peak i l = 8.0a, ? pulse width 300 s; duty cycle 2% case outline and dimensions ?to-204aa (modified to-3) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/01
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